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  the future of analog ic technology mp86884 intelli-phase tm solution (integrated hs/ls fets and driver) in 6x6mm tqfn mp86884 rev. 1.02 www.monolithicpower.com 1 8/4/2014 mps proprietary information. patent protected. unauthorized photocopy and duplication prohibited. ? 2014 mps. all rights reserved. description the mp86884 is a monolithic half-bridge with built-in internal power mosfets and gate drivers. it achieves 55a of continuous output current over a wide input supply range. integration of the driver and mosfets results in high efficiency due to optimal dead time control and parasitic inductance reduction. the mp86884 is a monolithic ic approach to drive up to 55a per phase. this very small 6mmx6mm tqfn device can operate from 100khz to 1mhz. this device works with tri-state output controllers. it also comes with a general- purpose current sense and temperature sense. the mp86884 is ideal for server applications where efficiency and small size are a premium. features ? wide 4.5v to 14v operating input range ? simple logic interface ? 55a output current ? accepts tri-state pwm signal ? built-in switch for bootstrap ? current sense ? temperature sense ? current limit protection ? used for multi-phase operation ? available in 6mm x 6mm tqfn package ? rohs6 compliant applications ? server core voltage ? graphic card core regulators ? power modules a ll mps parts are lead-free and adhere to the rohs directive. for mps green status, please visit mps website under quality assurance. ?mps? and ?the future of analog ic technology? are registered trademarks of monolithi c power systems, inc. intelli-phase is trademark of monolithic power systems, inc. typical application vin vdddrv vtemp mp86884 vdd pwm cs en vout cin 22 7 31 25 26 27 34 1-6 32 28 in vdd pwm cs 29 dt sw bst t1 t2 vtemp 24 33 8-21 30 en sync vss pgnd in 23 cout l 0 70 75 80 85 90 95 0 5 10 15 20 25 30 35 40 45 50 55
mp86884 ? intelli-phase solution in 6x6mm tqfn mp86884 rev. 1.02 www.monolithicpower.com 2 8/4/2014 mps proprietary information. patent protected. unauthorized photocopy and duplication prohibited. ? 2014 mps. all rights reserved. ordering information part number* package top marking MP86884DQKT 6x6mm tqfn mp86884 * for tape & reel, add suffix ?z (e.g. MP86884DQKT?z) for rohs compliant packaging, add suffix ?lf (e.g. MP86884DQKT?lf?z) package reference absolute maximum ratings (1) supply voltage v in ....................................... 16v v sw (dc) ............................................. -1 v to 15v v sw (25ns) ............................................ -3v to 23v v bst .....................................................v sw + 6v all other pins ................................. -0.3v to +6v instantaneous current .............................. 100a continuous power dissipation (t a =+25c) (2) ............................................................ 4.3w junction temper ature .............................. 150c lead temperat ure ................................... 260c storage temperature ............... -65c to +150c recommended operating conditions (3) supply voltage v in .......................... 4.5v to 14v driver voltage v dddrv ..................... 4.5v to 5.5v logic voltage v dd .......................... 4.5v to 5.5v operating junction temp. (t j ). -40c to +125c thermal resistance (4) ja jc 6x6mm tqfn......................... 29 ....... 8 .... c/w notes: 1) exceeding these ratings may damage the device. 2) the maximum allowable power dissipation is a function of the maximum junction temperature t j (max), the junction-to- ambient thermal resistance ja , and the ambient temperature t a . the maximum allowable continuous power dissipation at any ambient temperature is calculated by p d (max) = (t j (max)-t a )/ ja . exceeding the maximum allowable powe r dissipation will cause excessive die temperature. 3) the device is not guaranteed to function outside of its operating conditions. 4) measured on jesd51-7, 4-layer pcb.
mp86884 ? intelli-phase solution in 6x6mm tqfn mp86884 rev. 1.02 www.monolithicpower.com 3 8/4/2014 mps proprietary information. patent protected. unauthorized photocopy and duplication prohibited. ? 2014 mps. all rights reserved. electrical characteristics v in = 12v, v dddrv =v dd =5v, t a = -40c to 125c, unless otherwise noted. parameters symbol condition min typ max units i in shutdown i in ( off ) v dddrv = v dd = 0v 55 a i in standby i in (standby) v dddrv = v dd = 5v, pwm=en=low 60 a v in under voltage lockout threshold rising 4 4.4 v v in under voltage lockout threshold hysteresis 300 mv i dddrv quiescent current i dddrv ( quiescent ) pwm=low 500 a i dddrv shutdown current i dddrv shutdown 250 a i dd quiescent current i dd ( quiescent ) pwm=low 2.4 ma i dd shutdown current i dd shutdown 70 a vdd voltage uvlo rising 4 4.4 v vdd voltage uvlo hysteresis 300 mv high side current limit (5) i lim 80 a low side current limit (5) -30 a en input low voltage 0.4 v en input high voltage 2 v dead-time rising (5) 3 ns dead-time falling (5) 8 ns sync current i sync v sync =0v 13 a sync logic high voltage 2 v sync logic low voltage 0.4 v pwm high to sw rising delay (5) 35 ns pwm low to sw falling delay (5) 35 ns pwm tristate to sw hi-z delay (5) t lt i out =10a 60 ns t tl i out =10a 60 t ht i out =10a 75 t th i out =10a 45 minimum pwm pulse width (5) 30 ns current sense accuracy (5) i out =30a 4 % current sense gain 10 a/a temperature sense gain ( 6 ) 10 mv/c temperature sense offset (6) -100 mv pwm input current i pwm v pwm =5v, v en =5v 105 a v pwm =0v, v en =5v -105 a pwm logic high voltage 4.00 v pwm tristate region (5) 1.45 3.20 v pwm logic low voltage 0.50 v notes: 5) guaranteed by design. 6) see ?junction temperature sense? section for details.
mp86884 ? intelli-phase solution in 6x6mm tqfn mp86884 rev. 1.02 www.monolithicpower.com 4 8/4/2014 mps proprietary information. patent protected. unauthorized photocopy and duplication prohibited. ? 2014 mps. all rights reserved.
mp86884 ? intelli-phase solution in 6x6mm tqfn mp86884 rev. 1.02 www.monolithicpower.com 5 8/4/2014 mps proprietary information. patent protected. unauthorized photocopy and duplication prohibited. ? 2014 mps. all rights reserved. pin functions pin # name description 1-6 exposed pad sw switch output. 7 vdddrv driver voltage. connect to 5v supply and decouple with 1f to 4.7f ceramic capacitor. 8-21 exposed pad pgnd power ground. 22-23 exposed pad in supply voltage. place c in close to the device to prevent large voltage spikes at the input. 24 en enable. pull low to place sw in a high impedance state. 25 vtemp single pin temperature sense output. 26 t2 test pin. connect to ground. 27 t1 test pin. connect to ground. 28 cs current sense output. requires an external resistor. 29 dt dead time. it is recommended to float this pin to use default dead time setting. 30 vss signal ground. 31 vdd internal circuitry voltage. connect to vdddrv thru 2.2 ? resistor and decouple with 1f capacitor to vss. connect vss and pgnd at this point. 32 pwm pulse width modulation. leave pwm floating or drive to mid-state to put sw in high impedance state. 33 sync synchronous low switch. leave open or pull high to enable. pull low to enter diode emulation mode. 34 bst bootstrap. requires a 0.22f to 1f capacitor to drive the power switch?s gate above the supply voltage. connects between sw and bst pins to form a floating supply across the power switch driver.
mp86884 ? intelli-phase solution in 6x6mm tqfn mp86884 rev. 1.02 www.monolithicpower.com 6 8/4/2014 mps proprietary information. patent protected. unauthorized photocopy and duplication prohibited. ? 2014 mps. all rights reserved. typical characteristics
mp86884 ? intelli-phase solution in 6x6mm tqfn mp86884 rev. 1.02 www.monolithicpower.com 7 8/4/2014 mps proprietary information. patent protected. unauthorized photocopy and duplication prohibited. ? 2014 mps. all rights reserved. typical performance characteristics v in =12v, v out =1.2v, v dddrv = v dd =5v, l=200nh, f sw =600khz, t a =25 o c, no droop, unless otherwise noted. normalized power loss vs. output voltage normalized power loss vs. inductance normalized power loss vs. switching frequency efficiency (%) loss (w) normalized loss (w) normalized loss (w) i out (a) i out (a) f sw (khz) i out (a) i out (a) v out (v) 70 75 80 85 90 95 0 5 10 15 20 25 30 35 40 45 50 55 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 40 45 50 55 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 300 400 500 600 700 800 900 1000 0.90 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 1.10 1.12 1.14 1.16 1.18 1.20 100 150 200 250 300 350 400 450 500 10 15 20 25 30 35 40 45 50 55 60 0102030405060708090 10 15 20 25 30 35 40 45 50 55 60 0102030405060708090 safe operating area with heat sink no airflow 200 fpm 400 fpm no airflow 200 fpm 400 fpm
mp86884 ? intelli-phase solution in 6x6mm tqfn mp86884 rev. 1.02 www.monolithicpower.com 8 8/4/2014 mps proprietary information. patent protected. unauthorized photocopy and duplication prohibited. ? 2014 mps. all rights reserved. typical performance characteristics (continued) v in =12v, v out =1.2v, v dddrv = v dd =5v, l=200nh, f sw =600khz, t a =25 o c, no droop, unless otherwise noted. 400mv/div. 400mv/div. 5v/div.
mp86884 ? intelli-phase solution in 6x6mm tqfn mp86884 rev. 1.02 www.monolithicpower.com 9 8/4/2014 mps proprietary information. patent protected. unauthorized photocopy and duplication prohibited. ? 2014 mps. all rights reserved. block diagram control logic current sense sw pgnd vss cs bst vdddrv in sync pwm en dt vdddrv vdd vtemp temperature sense t1 t2 figure 1: functional block diagram
mp86884 ? intelli-phase solution in 6x6mm tqfn mp86884 rev. 1.02 www.monolithicpower.com 10 8/4/2014 mps proprietary information. patent protected. unauthorized photocopy and duplication prohibited. ? 2014 mps. all rights reserved. operation the mp86884 is a 55a monolithic half-bridge driver with mosfets ideally suited for multi- phase buck regulators. when the en transitions from low to high and both v dd and v bst signals are sufficiently high, operation begins. it is recommended to use en pin to startup and shutdown the intelli-phase. to put sw node in a high impedance state, let pwm pin float or drive pwm pin to mid-state. drive the sync pin low to enter diode emulation mode. in diode emulation mode, the lsfet is off after inductor current crossed zero current. when hsfet over current is detected, the part will latch o ff. recycling vin/vdd or toggling en will release the latch and restart the device. when the lsfet detects a -30a current, the part will turn off the lsfet for that cycle.
mp86884 ? intelli-phase solution in 6x6mm tqfn mp86884 rev. 1.02 www.monolithicpower.com 11 8/4/2014 mps proprietary information. patent protected. unauthorized photocopy and duplication prohibited. ? 2014 mps. all rights reserved. application information current sense the cs pin is a current source that generates 10 a per 1a of lsfet current. it will hold the valley current when ls turned off. place a resistor between cs pin and ground to generate a voltage proportional to the output current. a capacitor is optional for noise immunity. intelli-phase?s current sense output can be used by controller to accurately monitor the output current. the cycle-by-cycle current information from cs pin can be used for phase current balancing, over current protection and active voltage positioning (output voltage droop). in multi-phase operation, the cs pins of every intelli-phase can be summed through resistors and connected to the current sense amplifier of the controller. this circuitry is shown in figure 2. the reference voltage cannot be higher than 3.2v. figure 2: multi-phase current sense utilization junction temperature sense the vtemp pin is a voltage output proportional to the junction temperature. the vtemp pin output voltage is 10mv/c with a 100mv offset. vtemp = junction temperature x 10mv/c ? 100mv. for example, if the junction temperature is 80c, then the vtemp voltage is 700mv. be sure to measure this voltage between vtemp and vss pins for the most accurate reading. in multi- phase operation, the vtemp pins of every intelli- phase can be connected to the temperature monitor pin of the controller. a sample circuitry is shown in figure 3. vtemp signals can also be used for system thermal protection as shown in figure 4.
mp86884 ? intelli-phase solution in 6x6mm tqfn mp86884 rev. 1.02 www.monolithicpower.com 12 8/4/2014 mps proprietary information. patent protected. unauthorized photocopy and duplication prohibited. ? 2014 mps. all rights reserved. figure 3: multi-phase temperature sense utilization figure 4: system thermal protection pcb layout guide line pcb layout plays an important role to achieve stable operation. for optimal performance, follow these guidelines. 1. always place some input bypass ceramic capacitors next to the device and on the same layer as the device. do not put all of the input bypass capacitors on the back side of the device. use as many via and input voltage planes as possible to reduce switching spikes. place the bst capacitor and the vdddrv capacitor as close to the device as possible. 2. place the vdd decoupling capacitor close to the device. connect vss and pgnd at the point of vdd capacitor's ground connection. 3. it is recommended to use 0.22f to 1f bootstrap capacitor and 3.3 ? bootstrap resistance. do not use capacitance values below 100nf for the bst capacitor. 4. connect in, sw and pgnd to large copper areas and use via to cool the chip to improve thermal performance and long-term reliability. 5. keep the path of switching current short and minimize the loop area formed by the input capacitor. keep the connection between the sw pin and the input power ground as short and wide as possible.
mp86884 ? intelli-phase solution in 6x6mm tqfn mp86884 rev. 1.02 www.monolithicpower.com 13 8/4/2014 mps proprietary information. patent protected. unauthorized photocopy and duplication prohibited. ? 2014 mps. all rights reserved. typical application circuits vout pgnd vin sclk sdio alert# cpu vtt 5v vrrdy vrhot# 5v vin fault# en vout pgnd vin sw pgnd bst vdddrv vss en pwm cs vtemp sync r boot r tmax r iccmax r addr r fs r aam r slope r imon cs1 cs2 cs3 cs4 pwm1 pwm2 pwm3 pwm4 ccm vosen gndsen idroop vidff comp fb ocpset iref vcc gnd (pad) vdd sclk sdio alert# addr vrrdy vrhot# imon fault# temp en vboot tmax aam slope fset mp2935 4-phase vr12.5 pwm controller vcm icc max otpg otpd vdd vin 5v vin sw pgnd bst vdddrv vss en pwm cs vtemp sync vdd vin 5v vin sw pgnd bst vdddrv vss en pwm cs vtemp sync vdd vin 5v vin sw pgnd bst vdddrv vss en pwm cs vtemp sync vdd intelli-phase intelli-phase intelli-phase intelli-phase figure 5: 4-phase intelli-phase with mp2935 vr12.5 controller
mp86884 ? intelli-phase solution in 6x6mm tqfn notice: the information in this document is subject to change without notice. please contact mps for current specifications. users should warrant and guarantee that third party intellectual property rights are not infringed upon when integrating mps products into any application. mps will not assume any legal responsibility for any said applications. mp86884 rev. 1.02 www.monolithicpower.com 14 8/4/2014 mps proprietary information. patent protected. unauthorized photocopy and duplication prohibited. ? 2014 mps. all rights reserved. package information tqfn (6mm x 6mm)


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